Finfet with epitaxial source and drain regions and dielectric isolated channel region

ABSTRACT

A semiconductor device is provided that includes a pedestal of an insulating material present over at least one layer of a semiconductor material, and at least one fin structure in contact with the pedestal of the insulating material. Source and drain region structures are present on opposing sides of the at least one fin structure. At least one of the source and drain region structures includes at least two epitaxial material layers. A first epitaxial material layer is in contact with the at least one layer of semiconductor material. A second epitaxial material layer is in contact with the at least one fin structure. The first epitaxial material layer is separated from the at least one fin structure by the second epitaxial material layer. A gate structure present on the at least one fin structure.

BACKGROUND

1. Technical Field

The present disclosure relates to semiconductor devices, such assemiconductor devices including fin structures.

2. Description of the Related Art

The dimensions of semiconductor field effect transistors (FETs) havebeen steadily shrinking over the last thirty years or so, as scaling tosmaller dimensions leads to continuing device performance improvements.Planar FET devices typically have a conducting gate electrode positionedabove a semiconducting channel, and electrically isolated from thechannel by a thin layer of gate oxide. Current through the channel iscontrolled by applying voltage to the conducting gate. With conventionalplanar FET scaling reaching fundamental limits, the semiconductorindustry is looking at more unconventional geometries that willfacilitate continued device performance improvements. One such class ofdevice is a fin field effect transistor (finFET).

SUMMARY

In one aspect, a semiconductor device is provided that includes apedestal of an insulating material present over at least one layer of asemiconductor material, and at least one fin structure in contact withthe pedestal of the insulating material. Source and drain regionstructures are present on opposing sides of the at least one finstructure. At least one of the source and drain region structuresincludes at least two epitaxial material layers. A first epitaxialmaterial layer of the at least two epitaxial layers is in contact withthe at least one layer of semiconductor material. A second epitaxialmaterial layer of the at least two epitaxial layers is in contact withthe at least one fin structure. The first epitaxial material layer isseparated from the at least one fin structure by the second epitaxialmaterial layer. A gate structure present on the at least one finstructure.

In another aspect, a method of forming a semiconductor device isprovided that includes providing at least one fin structure over astacked structure of an insulator layer that is present over at leastone semiconductor layer. A gate structure may then be formed on achannel region portion of the at least one fin structure. Exposedportions of the at least one fin structure can then be removed. Asacrificial spacer is formed on a sidewall of the gate structure.Exposed portions of the insulator layer may then be removed to provide apedestal of insulating material exposing a portion of at least onesemiconductor layer. A first epitaxial material layer may then be formedon the portion of the at least one semiconductor layer exposed byremoving the exposed portions of the insulator layer. The firstepitaxial material layer contacts the sacrificial spacer. Thesacrificial spacer can then be removed. A second epitaxial materiallayer may then be formed in the space provided by removing thesacrificial spacer. The second epitaxial material layer contacts asidewall of the at least one fin structure. The first and secondepitaxial material layers provide source and drain regions on opposingsides of the channel region portion of the at least one fin structure.

BRIEF DESCRIPTION OF DRAWINGS

The following detailed description, given by way of example and notintended to limit the disclosure solely thereto, will best beappreciated in conjunction with the accompanying drawings, wherein likereference numerals denote like elements and parts, in which:

FIG. 1A is a side cross-sectional view along a length of a finstructure, i.e., parallel to the length of the fin structure, depictingone embodiment of a FinFET semiconductor device including source anddrain region structures composed of at least two epitaxial materiallayers, in accordance with one embodiment of the present disclosure.

FIG. 1B is a side cross-sectional view perpendicular to the length ofthe fin structure depicted in FIG. 1A along section line A-A.

FIG. 2A is a side cross-sectional view of at least one fin structurealong a length of the fin structure, wherein the fin structure is formedover a stacked structure of an insulator layer that is present over atleast one semiconductor layer, as used to form a finFET semiconductordevice, in accordance with one embodiment of the present disclosure.

FIG. 2B is a side cross-sectional view perpendicular to the length ofthe fin structure depicted in FIG. 2A along section line A-A.

FIG. 3A is a side cross-sectional view along a length of the finstructure depicting forming a sacrificial gate structure on the channelregion portion of the at least one fin structure that is depicted inFIG. 2A.

FIG. 3B is a side cross-sectional view perpendicular to the length ofthe fin structure depicted in FIG. 3A along section line A-A.

FIG. 4A is a side cross-sectional view along a length of the finstructure depicting removing the exposed portions of the at least onefin structure depicted in FIG. 3A, in accordance with one embodiment ofthe present disclosure.

FIG. 4B is a side cross-sectional view perpendicular to the length ofthe fin structure depicted in FIG. 4A along section line A-A.

FIG. 5A is a side cross-sectional view along a length of the finstructure depicting forming a sacrificial spacer on a sidewall of thesacrificial gate structure that is depicted in FIG. 3A, in accordancewith one embodiment of the present disclosure.

FIG. 5B is a side cross-sectional view perpendicular to the length ofthe fin structure depicted in FIG. 5A along section line A-A.

FIG. 6A is a side cross-sectional view along a length of the finstructure depicting removing exposed portions of the insulator layer toprovide a pedestal of insulating material exposing a portion of at leastone semiconductor layer, in accordance with one embodiment of thepresent disclosure.

FIG. 6B is a side cross-sectional view perpendicular to the length ofthe fin structure depicted in FIG. 6A along section line A-A.

FIG. 7A is a side cross-sectional view along a length of the finstructure depicting forming a first epitaxial material layer on theportion of the at least one semiconductor layer exposed by removing theexposed portions of the insulator layer, as depicted in FIG. 6A, inaccordance with one embodiment of the present disclosure.

FIG. 7B is a side cross-sectional view perpendicular to the length ofthe fin structure depicted in FIG. 7A along section line A-A.

FIG. 8A is aside cross-sectional view along a length of the finstructure depicting removing the sacrificial spacer, in accordance withone embodiment of the present disclosure.

FIG. 8B is a side cross-sectional view perpendicular the length of thefin structure depicted in FIG. 8A along section line A-A.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Detailed embodiments of the claimed structures and methods are disclosedherein; however, it is to be understood that the disclosed embodimentsare merely illustrative of the claimed structures and methods that maybe embodied in various forms. In addition, each of the examples given inconnection with the various embodiments is intended to be illustrative,and not restrictive. Further, the figures are not necessarily to scale,some features may be exaggerated to show details of particularcomponents. Therefore, specific structural and functional detailsdisclosed herein are not to be interpreted as limiting, but merely as arepresentative basis for teaching one skilled in the art to variouslyemploy the methods and structures of the present disclosure. Forpurposes of the description hereinafter, the terms “upper”, “lower”,“right”, “left”, “vertical”, “horizontal”, “top”, “bottom”, andderivatives thereof shall relate to the embodiments of the disclosure,as it is oriented in the drawing figures. The terms “present on”, and“over” mean that a first element, such as a first structure, is presenton a second element, such as a second structure, wherein interveningelements, such as an interface structure, e.g. interface layer, may bepresent between the first element and the second element. The terms“direct contact” and “contacting” mean that a first element, such as afirst structure, and a second element, such as a second structure, areconnected without any intermediary conducting, insulating orsemiconductor layers at the interface of the two elements. As usedherein, “semiconductor device” refers to an intrinsic semiconductormaterial that has been doped, that is, into which a doping agent hasbeen introduced, giving it different electrical properties than theintrinsic semiconductor. Doping involves adding dopant atoms to anintrinsic semiconductor, which changes the electron and hole carrierconcentrations of the intrinsic semiconductor at thermal equilibrium.Dominant carrier concentration in an extrinsic semiconductor determinesthe conductivity type of the semiconductor. A field effect transistor(FET) is a semiconductor device in which output current, i.e.,source-drain current, is controlled by the voltage applied to a gatestructure to the semiconductor device. A field effect transistor hasthree terminals, i.e., gate structure, source region and drain region.As used herein, a “fin structure” refers to a semiconductor material,which is employed as the body of a semiconductor device, in which thegate structure is positioned around the fin structure such that chargeflows down the channel on the two sidewalls of the fin structure andoptionally along the top surface of the fin structure. A Fin FieldEffect Transistor (FinFET) is a semiconductor device that positions thechannel region of the semiconductor device in a fin structure.

In some embodiments, the methods and structures disclosed herein providea FinFET semiconductor device having strained based performanceenhancements. It has been determined that the appropriately appliedstrain can provide carrier speed enhancements in both FinFET onsemiconductor on insulator (SOI) substrates or semiconductor devicesincluding fin structures on local isolation. One way to strain thechannel region of the FinFET is by growing strain inducing epitaxialmaterial in the source region and drain region of the FinFET, in whichthe epitaxial material being grown has different lattice dimensions thanthe deposition surface that the epitaxial material is formed on. Forexample, silicon germanium (SiGe) that is epitaxially grown on a silicon(Si) deposition surface produces a compressive stress that when inducedon the channel region of a p-type conductivity FinFET increases holecarrier speed, and silicon doped with carbon (Si:C) that is epitaxiallygrown on a silicon (Si) deposition surface produces a tensile stressthat when induced on the channel region of an n-type conductivity FinFETincreases electron carrier speed. The term “epitaxial material” denotesa semiconductor material that has been formed using an epitaxial growthand/or epitaxial deposition process, “Epitaxial growth and/or epitaxialdeposition” means the growth of a semiconductor material on a depositionsurface of a semiconductor material, in which the semiconductor materialbeing grown has substantially the same crystalline characteristics asthe semiconductor material of the deposition surface. In someembodiments, when the chemical reactants are controlled, and the systemparameters set correctly, the depositing atoms of an epitaxialdeposition process arrive at the deposition surface with sufficientenergy to move around on the surface and orient themselves to thecrystal arrangement of the atoms of the deposition surface. An epitaxialmaterial has substantially the same crystalline characteristics as thesemiconductor material of the deposition surface. For example, anepitaxial film deposited on a {100} crystal surface will take on a {100}orientation. The epitaxial deposition process may be carried out in thedeposition chamber of a chemical vapor deposition (CVD) apparatus.

It has been determined that growing epitaxial semiconductor materialalong a dielectric surface, such as an oxide surface, as well as havingtwo epitaxy growth fronts, e.g., one from the surface of a basesubstrate and one from the side-wall surface of a fin structure, canlead to the creation of crystal defects in the epitaxial material.Crystal defect that are proximate to the channel region of asemiconductor device, such as a FinFET, have a negative impact onreliability. Therefore, it is desired to improve the FinFET structureand FinFET performance by employing strain inducing material, such asepitaxially grown source and drain structures, without producing defectsat the interface of source and drain regions and the channel region ofthe device.

In some embodiments, the methods and structures disclosed herein providestrain inducing source and drain region structures composed ofepitaxially formed material, while eliminating the incidence of defectsat the interface of the source and drain regions and the channel regionof the semiconductor device. For example, in some embodiments, themethods and structures provided herein can move the site of potentialdefect formation that can occur during the epitaxial growth process forforming source and drain regions of strain inducing epitaxial materialsaway from the channel region of the device. The methods and structuresof the present disclosure are now discussed with more detail referringto FIGS. 1-8B.

FIGS. 1A and 1B depict one embodiment of a FinFET semiconductor deviceincluding a pedestal of an insulating material 120 that is present overat least one layer of a semiconductor material 100, 110, wherein atleast one fin structure 130 of the FinFET semiconductor device is incontact with the pedestal of the insulating material 120. In someembodiments, the at least one layer of the semiconductor material 100,110 may include a punch-through stopper layer 110 and a semiconductorsubstrate 100. A gate structure 140 is present on the at least one finstructure 130. The at least one fin structure 130 provides the channelregion of the :FinFET semiconductor device. The gate structure 140typically includes at least one gate dielectric 135 that is present onthe channel region of the FinFET, and at least one gate conductor 140that is present on the at least one gate dielectric 135. A gate sidewallspacer 150 may be present on the sidewall of the gate structure 140. Asused herein, the term “channel” is the region underlying the gatestructure and between the source and drain regions of a semiconductordevice that becomes conductive when the semiconductor device is turnedon. As used herein, the term “drain region” means a doped region insemiconductor device located at the end of the channel region, in whichcarriers are flowing out of the semiconductor device through the drainregion. The term “source region” is a doped region in the semiconductordevice, in which majority carriers are flowing into the channel region.

In some embodiments, the source and drain region structures of theFinFET that is provided by the methods and structures disclosed hereinare composed of least two epitaxial material layers 180, 190. To providestrain inducing structures, the material of the at least two epitaxialmaterial layers 180, 190 is selected to have a different latticedimension than the lattice dimension of the deposition surfaces, e.g.,the at least one layer of a semiconductor material 100, 110. Forexample, when the punch-through stopper layer 110 is composed of silicon(Si), and the semiconductor device is an n-type conductivity FinFET, theat least two epitaxial material layers 180, 190 may be composed ofsilicon doped with carbon (Si:C). The smaller lattice dimension of thesilicon doped with carbon (Si:C) relative to the silicon (Si) punchthrough stopper layer 110 induces a tensile strain on the channel regionportion of the devices that increases the speed of electron chargecarriers, which increases the switching speed of the n-type conductivityFinFET. In another example, when the punch-through stopper layer 110 iscomposed of silicon (Si), and the semiconductor device is a p-typeconductivity FinFET, the at least two epitaxial material layers 180, 190may be composed of silicon germanium (SiGe). The larger latticedimension of the silicon germanium (SiGe) relative to the silicon (Si)punch-through stopper layer 110 induces a compressive strain on thechannel region portion of the devices that increases the speed of holecharge carriers, which increases the switching speed of the p-typeconductivity FinFET.

The interface I between the source and drain region structures of theFinFET and the channel region portion of the FinFET that is provided bythe disclosed methods and structures is substantially free of defects,such as point defects, voids, stacking faults, line defects anddislocation defects. By “substantially free” of defects it is meant thatthe maximum amount of defects at the interface between the source anddrain region structures and the channel region portion of the FinFET is10000 defects/cm² or less. In one example, the maximum amount of defectsthat is provided by the methods and structures disclosed herein at theinterface I between the source and drain region structures and thechannel region portion of the FinFET is 1000 defects/cm² or less. In yetanother example, the number of defects at the interface I between thesource and drain region structures and the channel region portion of theFinFET is 0.

In some embodiments, the at least two epitaxial semiconductor materiallayers 180, 190, include a first epitaxial material layer 180 and asecond epitaxial material layer 190. The first epitaxial material layer180 is epitaxially formed from the upper surface of the at least onelayer of the semiconductor material 100, 110, e.g., the punch-throughstopper layer 110. The second epitaxial semiconductor layer 190 of theat least two epitaxial semiconductor material layers is ⁻formedseparately, e.g., after, the first epitaxial material layer 180, and isepitaxially formed from at least the sidewall S2 of the at least one tinstructure 130, as well as the exposed surfaces S3, S4 of the firstepitaxial material layer 180. The first epitaxial material layer 180 isseparated from the at least one fin structure 130 by the secondepitaxial material layer 190. In some embodiments, because the secondepitaxial semiconductor material 190 is formed from the exposed sidewallS2 of the at least one fin structure 130, the epitaxial growth for thesecond epitaxial semiconductor material 190 at the channel regioninterface I is lateral and free of contacting dielectric surfaces. Theepitaxial growth at the channel interface region I only results from oneepitaxial growth front, i.e., the sidewall S2 of the fin structure 130,which ensures that the epitaxial material that is formed at theinterface I with the channel region of the device is substantially freeof defects. In some embodiments, the second epitaxial semiconductormaterial 190 may have a vertical portion 192 that is in direct contactwith the sidewall S2 of the channel region portion of the at least onefin structure 130, and may have a horizontal portion 191 on an uppersurface S4 of the first epitaxial material layer 180. Because the secondepitaxial semiconductor material 190 is formed using an epitaxial growthand/or epitaxial deposition process, the vertical portion 192 of thesecond epitaxial material layer 190 has a crystalline structure that isaligned with a crystal structure of the sidewall S2 of the at least onefin structure 130, and the horizontal portion 191 of the secondepitaxial material layer 190 has a crystalline structure that is alignedto the crystal structure of the upper surface S4 of the first epitaxialmaterial layer 180.

It is noted that in some embodiments, because the epitaxial material ofthe second epitaxial material layer 190 is being simultaneouslylaterally grown from the surfaces of the sidewall S2 of the at least onefin structure 130 and the sidewall S3 of the first epitaxial materiallayer 180, a defect region D1 may form in a central region of thevertical portion 192 of the second epitaxial material layer 190. Thedefect region D1 may form due to the epitaxial growth from two growthfronts, i.e., the sidewall S2 of the at least one fin structure 130 andthe sidewall S3 of the first epitaxial material layer 180. In oneexample, the defect region D1 may have a defect density that is greaterthan 10,000 defects/cm². In another example, the concentration ofdefects that may occur at the defect region D1 may range from 10,000defects/cm² to 500,000 defects/cm². It is noted that the defect regionD1 is separated from the channel region of the FinFET, which begins atthe sidewall S2 of the at least one fin structure 130. For example, thedefect region D1 may be separated from the channel region of the FinFETby a dimension ranging from 2 nm to 20 nm. Therefore, because the defectregion D1 is separated from the channel region of the FinFET, the defectregion D1 does not impact the performance and reliability of the device.The structures depicted in FIGS. 1A and 1B, as well as one embodiment ofa method for forming the FinFET that is depicted in FIGS. 1A and 1B arenow described in detail with reference to FIGS. 2A-8B.

FIGS. 2A and 2B depict one embodiment of a stacked structure of at leastone fin structure 130 that is present on an insulator layer 120, whereinthe insulator layer 120 is present over at least one semiconductor layer100, 110. The at least one semiconductor layer 100, 110 may include apunch-through stopper layer 110 that is present on the upper surface ofa semiconductor substrate 100. In some embodiments, the semiconductorsubstrate 100 may have a single crystal, i.e., monocrystalline, crystalstructure. In some embodiments, the semiconductor substrate 100 iscomposed of a silicon including material. In some embodiments, thesilicon including material that provides the semiconductor substrate 100may include, but is not limited to silicon, single crystal silicon,multicrystalline silicon, polycrystalline silicon, amorphous silicon,strained silicon, silicon doped with carbon (Si:C), silicon alloys orany combination thereof. In other embodiments, the semiconductorsubstrate 100 may be a semiconducting material that may include, but isnot limited to, germanium (Ge), silicon germanium (SiGe), silicongermanium doped with carbon (SiGe:C), germanium alloys, GaAs, InAs, InPas well as other III/V and II/VI compound semiconductors.

The punch through stopper layer 110 is typically composed of asemiconductor material. The semiconductor material that provides thepunch through stopper layer 110 may be any of the semiconductormaterials that have been described above for the semiconductor substrate100. Typically, the punch though stopper layer 110 is a doped layer thathas a conductivity type that is opposite the conductivity type of thelater formed source and drain regions. For example, when the laterformed source and drain region are doped to an n-type conductivity toprovide an n-type FinFET, the punch through stopper layer 110 is dopedto a p-type conductivity. In another example, when the later formedsource and drain region are doped to a p-type conductivity to provide ap-type FinFET, the punch through stopper layer 110 is doped to an n-typeconductivity. Typically, by forming a semiconductor layer having anopposite conductivity than the source and drain regions, thepunch-through stopper layer 110 reduces leakage current andshort-channel effects in the device. In some embodiments, thepunch-through stopper layer 110 is a material layer that is depositedonto the semiconductor substrate 100. In other embodiments, thepunch-through stopper layer 110 may be formed within the upper surfaceof the semiconductor substrate 100 using ion implantation or in-situdoped epitaxial growth. In some embodiments, the punch-through stopperlayer 110 may be omitted.

The insulator layer 120 that is present on the at least onesemiconductor layer 100, 110 may be a dielectric material, such as anoxide, nitride, oxynitride, high-k dielectric, low-k dielectric, or anysuitable combination of those materials. For example, when the insulatorlayer 120 is an oxide, the insulator layer 120 may be composed ofsilicon oxide. In another example, when the insulator layer 120 is anitride, the insulator layer 120 may be composed of silicon nitride. Theinsulator layer 120 may be deposited on the upper surface of the atleast one semiconductor layer 100, 110 using a chemical vapor deposition(CVD) process, such as plasma enhanced chemical vapor deposition(PECVD), metal organic chemical vapor deposition (MOCVD), high densityplasma chemical vapor deposition (HDPCVD) or a combination thereof. Theinsulator layer 120 may also be formed using a thermal growth method,such as thermal oxidation. In yet another embodiment, the insulatorlayer 120 may be a portion of an semiconductor on insulator (SOI)substrate, in which insulator layer 120 may be formed by implanting ahigh-energy dopant into a bulk semiconductor substrate and thenannealing the structure to form a buried insulating layer. In thisexample, the semiconductor substrate 100 would provide the basesubstrate of the SOI substrate, and the material layer that provides theat least one fin structure 130 would provide the semiconductor oninsulator (SOI) layer of the SOI substrate. In one example, thethickness of the insulator layer 120 may range from 10 nm to about 200nm.

The at least one fin structure 130 may be formed on the upper surface ofthe insulator layer 120. In some embodiments, the at least one finstructure 130 may be formed from the SOI layer of an SOI substrate, inwhich the insulator layer 120 would be provided by the buried dielectriclayer of the SOI substrate. In other embodiments, the at least one finstructure 130 may be formed from a semiconductor material layer that isdeposited, e.g., deposited by chemical vapor deposition (CVD), on theinsulator layer 120. In other examples, the semiconductor material layerthat provides the at least one fin structure 130 may be transferred tothe insulator layer 120 using layer transfer and bonding methods. Inother examples, the semiconductor material layer that provides the atleast one fin structure 130 may be formed by other known techniques,such as starting with a bulk semiconductor substrate, undercutting thematerial underneath the semiconductor layer that provides the at leaston fin structure, and then backfilling the undercut portion with one ormore dielectric materials. Some examples of semiconductor materials thatare suitable for providing the at least one fin structure 130 mayinclude silicon, single crystal silicon, multicrystalline silicon,polycrystalline silicon, amorphous silicon, strained silicon, silicondoped with carbon (Si:C), silicon alloys or any combination thereof. Inother embodiments, the material for the at least one fin structure 130may be a semiconducting material that may include, but is not limitedto, germanium (Ge), silicon germanium (SiGe), silicon germanium dopedwith carbon (SiGe:C), germanium alloys, GaAs, InAs, InP, as well asother III/V and II/VI compound semiconductors. in other embodiments, thematerial for the at least one fin structure 130 may be strained. Inother embodiments, the material for the at least one fin structure 130may have multiple regions. Each region includes at least one finstructure. Those regions may have the same or different materials and/orstrain. Following formation of the material for the at least one finstructure 130, the geometry and dimensions of the fin structures 130 maybe defined using etch processing. For example, the at least one finstructure 130 may be formed using sidewall image transfer (SIT) methods.More specifically, in one example of a SIT method, a sacrificial mandrelis first formed on a surface of the material layer for forming the atleast one fin structure 130. The sacrificial mandrel may be formed usingdeposition, patterning and development processes. Thereafter, adeposition such as chemical vapor deposition provides a dielectricprofile on the sidewalls of the sacrificial mandrel. The sacrificialmandrel may then be removed. For example, sacrificial mandrel can beremoved using a chemical strip or selective etching. In some examples,the sacrificial mandrel is amorphous carbon. In some examples, thesacrificial is amorphous silicon. Following removal of the sacrificialmandrel, the dielectric profile remains to provide an etch mask. Thematerial layer for the at least one fin structure 130 is then etchedusing the dielectric profile as an etch mask to define the geometry anddimensions of the least one fin structures 130. The etch process forforming the at least one fin structure 130 may be an anisotropic etch,such as reactive ion etching (RIE).

Referring to FIG. 2B, each of the fin structures 130 may have a heightH₁ ranging from 15 nm to 500 nm. In another embodiment, each of the finstructures 130 has a height H₁ ranging from 30 nm to 100 nm. In oneexample, each of the fin structures 130 has a height H₁ ranging from 30nm to 60 nm. Each of the fin structures 130 may have a width W₁ of lessthan 20 nm. In another embodiment, each of the fin structures 130 has awidth W₁ ranging from 5 nm to 10 nm. Although only one fin structure isdepicted in FIG. 2B, the present disclosure is not limited to only thisexample. It is noted that any number of fin structures 130 may bepresent on the insulator layer 120. The pitch, i.e., center of finstructure to center of adjacent fin structure distance, separatingadjacent fin structures may range from 10 to 500 nm. In another example,the pitch separating adjacent fin structures may range from 20 nm to 50nm.

FIGS. 3A and 3B depict one embodiment of forming a gate structure 50 onthe channel region portion of the at least one fin structure 130 that isdepicted in FIG. 2A. By “sacrificial” it is meant that the structure ispresent during processing of the semiconductor device, but is removedfrom the semiconductor device prior to the device being completed. Inthe present process flow, a sacrificial gate structure 50 is employed aspart of a replacement gate process. As used herein, the term“sacrificial gate structure” denotes a sacrificial structure thatdictates the geometry and location of the later formed functioning gatestructure 160. The “functional gate structure” operates to switch thesemiconductor device from an “on” to “off” state, and vice versa.

In one embodiment, the sacrificial material that provides thesacrificial gate structure 50 may be composed of any material that canbe etched selectively to the at least one fin structure 130. In oneembodiment, the sacrificial gate structure 50 may be composed of asilicon-including material, such as polysilicon. In another embodiment,the sacrificial gate structure 50 may be composed of a dielectricmaterial, such as an oxide, nitride or oxynitride material, or amorphouscarbon. The sacrificial gate structure 50 may be formed using deposition(e.g., chemical vapor deposition) photolithography and etch processes(e.g., reactive ion etching) to provide the sacrificial gate structure50.

FIGS. 3A and 3B also depicts forming a gate sidewall spacer 150 on thesidewall of the sacrificial gate structure 50. The gate sidewall spacer150 is typically composed of a dielectric material, such as an oxide,nitride, oxynitride, or other dielectric materials, such as high-k orlow-k materials. For example, when the gate sidewall spacer 150 iscomposed of an oxide, the gate sidewall spacer 150 may be composed ofsilicon oxide (SiO₂). In another example, when the gate sidewall spacer150 is composed of a nitride, the gate sidewall spacer 150 may becomposed of silicon nitride. Yet in another example, when the gatesidewall spacer 150 is composed of a low-k material, the gate sidewallspacer 150 may be composed of SiBCN. It is noted that the aforementionedcompositions for the gate sidewall spacer 150 are provided forillustrative purposes only, and are not intended to limit the presentdisclosure. In some embodiments, other material compositions are equallysuitable for the gate sidewall spacer 150, so tong as the laterdescribed sacrificial spacer can be removed selectively without removingthe gate sidewall spacer 150. The gate sidewall spacer 150 may be formedusing a deposition process, such as chemical vapor deposition (CVD), andan anisotropic etchback method.

FIGS. 4A and 4B depict one embodiment of removing the exposed portionsof the at least one fin structure 130 that is not covered by thesacrificial gate structure 50 and the gate sidewall spacer 150. Theexposed portions of the at least one fin structure 130 that are removedmay be removed by an etch process that removes the material of the leastone fin structure 130 selectively to at least one of the sacrificialgate structure 50, the gate sidewall spacer 150, and the insulator layer120. The term “selective” as used to describe a material removal processdenotes that the rate of material removal for a first material isgreater than the rate of removal for at least another material of thestructure to which the material removal process is being applied. Forexample, in one embodiment, a selective etch may include an etchchemistry that removes a first material selectively to a second materialby a ratio of 10:1 or greater. The etch process for removing the exposedportions of the at least one fin structure 130 may be an anisotropicetch. As used herein, an “anisotropic etch process” denotes a materialremoval process in which the etch rate in the direction normal to thesurface to be etched is greater than in the direction parallel to thesurface to be etched. One form of anisotropic etching that is suitablefor etching the exposed portions of the at least one fin structure 130is reactive ion etching. Reactive Ion Etching (RIE) is a form of plasmaetching in which during etching the surface to be etched is placed onthe RF powered electrode. Moreover, during RIE the surface to be etchedtakes on a potential that accelerates the etching species extracted fromplasma toward the surface, in which the chemical etching reaction istaking place in the direction normal to the surface. Other examples ofanisotropic etching that can be used at this point of the presentdisclosure include ion beam etching, plasma etching or laser ablation.The etch process exposes the portions of the dielectric layer 120 thatare on opposing sides of the sacrificial gate structure 50. In someembodiments, end point detection may be employed to determine when toterminate the etch process, or the etch process may be timed.

FIGS. 5A and 5B depict one embodiment of forming a sacrificial spacer170 on a sidewall of the sacrificial gate structure 50, as well as theexposed sidewall of the remaining portion of the at least one finstructure 130. Typically, the sacrificial spacer 170 is formed in directcontact with the outer surface of the gate sidewall spacer 150. Thesacrificial spacer 170 has a base portion that is in direct contact witha portion of the insulator layer 120. The width W2 of the base portionof the sacrificial spacer 170 may range from 3 nm to 30 nm. In anotherembodiment, the width W2 of the base portion of the sacrificial spacer170 may range from 5 nm to 15 nm. The width of sacrificial spacer 170may taper towards the upper surface of the sacrificial gate structure50. The sacrificial spacer 170 may be composed of a dielectric, such asan oxide, nitride, or oxynitride material. The sacrificial spacer 170 istypically composed of a dielectric material that can be removed, i.e.,etched, selectively to the gate sidewall spacer 150. For example, whenthe gate sidewall spacer 150 is composed of an oxide, such as siliconoxide, the sacrificial spacer 170 may be composed of a nitride, such assilicon nitride. It is noted that the aforementioned compositions forthe sacrificial 170 are provided for illustrative purposes only, and arenot intended to limit the present disclosure. In some embodiments, othermaterial compositions are equally suitable for the sacrificial spacer170, so long as the material of the sacrificial spacer 170 can beremoved selectively without removing the underlying gate sidewall spacer150. The sacrificial spacer 170 may be formed using a depositionprocess, such as chemical vapor deposition (CVD), and an anisotropicetchback method.

FIGS. 6A and 6B depict removing exposed portions of the insulator layer120 to provide a pedestal of insulating material exposing a portion ofat least one semiconductor layer 100, 110, e.g., exposing thepunch-through stopper layer 110. The exposed portions of the insulatorlayer 120 may be removed by an etch process that removes the material ofthe insulator layer 120 selectively to at least one of the sacrificialgate structure 50, the sacrificial spacer 170, and the at least onesemiconductor layer 100, 110, e.g., the punch-through stopper layer 110.The etch process for removing the exposed portions of the insulatorlayer 120 may be an anisotropic etch, such as reactive ion etch (RIE),ion beam etching, plasma etching or laser ablation. The etch processexposes the portions of the at least one semiconductor layer 100, 110,e.g., exposes portions of the punch-through stopper layer 110, that areon opposing sides of the sacrificial gate structure 50. In someembodiments, end point detection may be employed to determine when toterminate the etch process, or the etch process may be timed.

FIGS. 7A and 7B depict forming a first epitaxial material layer 180 onthe portion of the at least one semiconductor layer 100, 110, e.g., onthe punch-through stopper layer 110, that is exposed by removing theexposed portions of the insulator layer 120. The first epitaxialmaterial layer 180 is one of the material layers that provides thesource and drain regions of the FinFET. As described above, the firstepitaxial material layer 180 is formed using an epitaxial deposition(also referred to as an epitaxial growth process), in which the firstepitaxial material layer 180 is epitaxially grown from a surface of theat least one semiconductor layer 100, 110, e.g., the exposed uppersurface S1 of the punch-through stopper layer 110. The first epitaxialmaterial layer 180 grows upward from the upper surface S1 of the atleast one semiconductor layer 100, 100, and may grow into contact with,e.g., abut, the outer sidewall of the sacrificial spacer 170. Theepitaxial deposition process for forming the first epitaxial materiallayer 180 may be a selective deposition process. For example, althoughthe epitaxially deposited material orientates to the crystal arrangementof a semiconductor material and is deposited thereon, the epitaxialsemiconductor material may not be grown on a dielectric material, suchas the sacrificial spacer 17, as well as a gate dielectric cap (notshown) that is present atop the sacrificial gate structure 50.

The thickness T1 of the first epitaxial material layer 180 may rangefrom 25 nm to 500 nm. In another embodiment, the thickness T1 of thefirst epitaxial material layer 180 may range from 30 nm to 100 nm. Inyet another embodiment, the thickness T1 of the first epitaxial materiallayer 180 may range from 30 nm to 60 nm.

The material of the first epitaxial material 180 may be selecteddepending upon the conductivity type of the FinFET device being formed.For example, when the FinFET device has an n-type conductivity, i.e.,the source and drain structures are doped to n-type conductivity, thematerial of the first epitaxial material layer 180 may be selected toinduce a tensile strain on the channel region of the device. Forexample, to induce a tensile strain in the at least one fin structure130, when the exposed upper surface S1 of the punch-through stopperlayer 110 is composed of silicon (Si), the material that is selected forthe first epitaxial material layer 180 may be silicon doped with carbon(Si:C). For example, when the FinFET device has a p-type conductivity,i.e., the source and drain structures are doped to a p-typeconductivity, the material of the first epitaxial material layer 180 maybe selected to induce a compressive strain on the channel region of thedevice. For example, to induce a compressive st in the at least one finstructure 130, when the exposed upper surface S1 of the punch-throughstopper layer 110 is composed of silicon (Si), the material that isselected for the first epitaxial material layer 180 may be silicongermanium (SiGe). It is noted that the above material compositions forthe first epitaxial material layer 180 have been provided forillustrative purposes only, and are not intended to limit the presentdisclosure. For example, the material for the at first epitaxialmaterial layer 180 may also be composed of silicon (Si) and/or silicongermanium doped with carbon (SiGe:C), as well as other semiconductormaterials.

A number of different sources may be used for the deposition of thesemiconductor material that forms the first epitaxial material layer180. In some embodiments, in which the semiconductor material that formsthe first epitaxial material layer 180 is composed of silicon, thesilicon gas source for epitaxial deposition may be selected from thegroup consisting of hexachlorodisilane (Si₂Cl₆), tetrachlorosilane(SiCl₄), dichlorosilane (Cl₂SiH₂), trichlorosilane (Cl₃SiH),methyisilane ((CH₃)SiH₃), dimethylsilane ((CH₃)₂SiH₂), ethylsitane((CH₃CH₂)SiH₃), methyldisilane CH₃)Si₂H₅), dimethyldisitane((CH₃)₂Si₂H₄), hexamethyldisilane ((CH₃)₆Si₂) and combinations thereof.In some embodiments, in which the semiconductor material that forms thefirst epitaxial material layer 180 is composed of silicon germanium, thesilicon sources for epitaxial deposition may be selected from the groupconsisting of silane, disilane, trisilane, tetrasilane,hexachlorodisilane, tetrachlorosilane, dichlorosilane, trichiorosilane,methylsilane, dimethylsilane, ethylsilane, methyldisilane,dimethyldisilane, hexamethyldisilane and combinations thereof, and thegermanium gas sources may be selected from the group consisting ofgermane, digermane, halogermane, dichlorogermane, trichlorogermane,tetrachlorogermane and combinations thereof. When the first epitaxialmaterial layer 180 is composed of silicon doped with carbon, a carbonsource may be added to deposition chamber with the above describedsilicon sources. Carbon sources, i.e., carbon containing precursors,which are useful to deposit silicon containing compounds includeorganosilanes, alkenes and alkynes of ethyl, propyl and butyl. Suchcarbon sources include methylsilane (CH₃SiH₃), dimethylsilane((CH₃)₂SiH₂), ethylsilane (CH₃CH₂SiH₃), methane (CH₄), ethylene (C₂H₄),ethyne (C₂H₂), propane (C₃H₈), propene (C₃H₆), butyne (C₄H₆), as well asothers. The carbon (C) content of the epitaxial grown silicon doped withcarbon (Si:C ) may range from 0.3% to 5%, by atomic weight %. In anotherembodiment, the carbon content of the epitaxial grown silicon doped withcarbon (Si:C) may range from 1% to 2%. It is noted that the aboveexamples of source gasses for deposition of epitaxial material areprovided for illustrative purposes only, and are not intended to belimitation. Other deposition source gasses may be equally suitable foruse with the present disclosure.

The first epitaxial material layer 180 may be doped with an n-type orp-type dopant to provide the conductivity type of the source and drainregions of the FinFET. The first epitaxial material layer 180 may bein-situ doped. By “in-situ” it is meant that the dopant that dictatesthe conductivity type, i.e., n-type or p-type, of the source and drainregions is introduced during the process step that forms the materiallayer for the source and drain regions, e.g., first epitaxial materiallayer 180. An in-situ doped first epitaxial material layer 180 havingp-type conductivity may be produced in a type IV semiconductor, such asa silicon including semiconductor or a germanium includingsemiconductor, by doping the type IV semiconductor material with groupIII-A elements of the periodic table of elements, such as boron (B). Anin situ doped first epitaxial material layer 180 having an n-typeconductivity may be produced in a type IV semiconductor, such as asilico including semiconductor or a germanium including semiconductor,by doping the type IV semiconductor material with group V elements ofthe periodic table of elements, such as phosphorus (P) or arsenic (As).In some embodiments, uniform concentration of n-type or p-type dopantthat is present in the in-situ doped first epitaxial material layer 180may range from 1×10¹⁴ atoms/cm³ to 2×10²¹ atoms/cm³. In anotherembodiment, the concentration of n-type or p-type dopant that is presentin the in-situ doped first epitaxial material layer 180 may range from1×10¹⁹ atoms/cm³ to 1×10²¹ atoms/cm³.

In one embodiment, the n-type gas dopant source for introducing thein-situ dopant to the first epitaxial material layer 180 may includearsine AsH₃), phosphine (PH₃) and alkylphosphines, such as with theempirical formula R_(x)PH_(3-x)), where R=methyl, ethyl, propyl or butyland x=1, 2 or 3. Alkylphosphines suitable for use with the presentdisclosure include trimethylphosphine ((CH₃)₃P), dimethylphosphine((CH₃)₂PH), triethylphosphine ((CH₃CH₂)₃P) and diethylphosphine((CH₃CH₂)₂PH). In one embodiment, the p-type gas dopant source forintroducing the in-situ dopant to the first epitaxial material layer 180may include diborane B₂H₆).

FIGS. 8A and 8B depict one embodiment of removing the sacrificial spacer170. Removing the sacrificial spacer 170 provides an opening 165 thatexposes the sidewall S2 of the remaining portion of the at least one finstructure 130 that provides the channel portion of the FinFET. Theopening 165 that is formed by removing the sacrificial spacer 170 alsoexposes an upper surface of the pedestal of insulator material, theremaining portion of the insulating layer 120.

In some embodiments, the sacrificial spacer 170 may be removed by aselective etch process. The sacrificial spacer 170 may be removed usinga wet or dry etch process. In one embodiment, the sacrificial spacer 170is removed by reactive ion etch (RIE). In one example, the etch processfor removing the sacrificial spacer 170 can include an etch chemistryfor removing the sacrificial spacer 170 selective to the pedestal of theinsulator material, i.e., the remaining portion of the insulator layer120, the gate sidewall spacer 150, and the first epitaxial material 180.

The opening 165 that is formed by removing the sacrificial spacer 170typically has the same dimensions as the sacrificial spacer 170.Therefore, the width W3 of the opening 165 may range from 3 nm to 30 nm.In another embodiment, the width of the opening 165 may range from 5 nmto 15 nm.

Referring to FIGS. 1A and 1B, a second epitaxial material layer 190 maybe formed filling the opening 165 that is provided by removing of thesacrificial spacer 170. The second epitaxial material layer 190 isepitaxially grown (also referred to as epitaxially deposited) on, i.e.,in direct contact with, a sidewall S2 of the at least one fin structure130, as well as a sidewall S3 of the first epitaxial material layer 180and an upper surface S4 of the first epitaxial material layer 180. Theportion of the second epitaxial material layer 190 that is grown fromthe sidewall S2 of the at least one fin structure 130 and the sidewallS3 of the 180 of the first epitaxial material layer 180 is referred toas the vertical portion 192 of the second epitaxial material layer 190,which fills the opening 165 provided by removing the sacrificial spacer170. Similar to the first epitaxial material layer 180, the secondepitaxial material layer 190 is formed using an epitaxial growth process(also referred to as epitaxial deposition). The epitaxial growth processis selective for growing epitaxial material on semiconductor surfaces,such as the sidewall S2 of the at least one fin structure 130, and notgrowing epitaxial material on dielectric surfaces, such as the surfaceof the pedestal of insulator material, i,e., remaining portion of theinsulator layer 120, that is present at the base of the opening 165. Theportion of the second epitaxial material layer 190 that is formed on theupper surface S4 of the first epitaxial material layer 180 is referredto as the horizontal portion 191 of the second epitaxial material layer190. The thickness of the horizontal portion 191 of the second epitaxialmaterial layer 190 may range from 5 nm to 20 nm.

Typically, the first and second epitaxial material layers 180, 190provide source and drain regions on opposing sides of the channel regionportion of the at least one fin structure 130. The second epitaxialmaterial layer 190 separates the first epitaxial material layer 180 fromthe sidewall S2 of the remaining portion of the at least one finstructure 130. The sidewall S2 of the remaining portion of the at leastone fin structure 130 provides the interface I between the channelregion of the FinFET and the source and drain regions of the FinFET. Thematerial and conductivity type for the second epitaxial material layer190 is typically the same as the material and conductivity type of thefirst epitaxial material layer 180. For example, when the FinFET has ap-type conductivity both the first and second epitaxial material layers180, 190 may be composed of silicon germanium (SiGe) doped to a p-typeconductivity, and when the FinFET has an n-type conductivity both thefirst and second epitaxial material layers 180, 190 may be composed ofsilicon doped with carbon (Si:C) doped to an n-type conductivity.Therefore, the above description of the materials, dopants and method offormation for the first epitaxial material layer 180 that is describedabove with reference to FIGS. 7A and 7B is suitable for the materials,dopants and method of formation for the second epitaxial material layer190 that is depicted in FIGS. 1A and 1B.

In some embodiments, the methods and structures disclosed herein caneliminate the incidence of defects at the interface I of a channelregion of a FinFET device and the epitaxial source and drain regions ofthe FinFET device by forming the epitaxial source and drain regionsusing at least two separately formed epitaxial material layers 180, 190.Typically, forming epitaxial source and drain regions in prior FinFETdevices includes epitaxial growth on a sidewall of a channel regionportion of the FinFET simultaneously with epitaxial growth on a recessedsubstrate surface directly adjacent to and intersecting with thesidewall of the channel region portion of the FinFET. In prior devices,it has been determined that the recessed substrate surface provides arapid bottom up epitaxial growth, while the sidewall of the channelregion portion provides a slower lateral epitaxial growth. The twoepitaxial growth fronts in such close proximity results in the formationof defects at the interface of the channel region and the source anddrain regions of the FinFET. In the present disclosure, the recessedsubstrate surface that provides for the rapid bottom up epitaxial growthdirectly adjacent to the sidewall of the channel region portion of thefin structure has been replaced with a dielectric surface, i.e., thepedestal of insulator material. This removes one of the growth frontsthat have caused defect formation in prior FinFETs, because theepitaxial growth process for forming the second epitaxial material 190will not form epitaxial material on a dielectric surface. In someembodiments, rapid bottom up epitaxial growth has been provided in thepresent method by the first epitaxial material 180 that is grown from anexposed surface S1 of the at least one semiconductor layer 100, 110,e.g., the punch-through stopper layer 110, which is separated from thesidewall S2 of the channel region portion of the at least one finstructure 120. Following the formation of the first epitaxial materiallayer 180, the second epitaxial material 190 is laterally formeddirectly on the sidewall S2 of the at least one fin structure 130 thatprovides the channel region of the device. Bottom up growth of epitaxialmaterial adjacent to the sidewall S2 of the at least one fin structure130 during the formation of the second epitaxial material 190 isobstructed by the pedestal of dielectric material, i.e., remainingportion of the insulator layer 120. The unobstructed lateral growth ofepitaxial semiconductor material for forming the second epitaxialsemiconductor material 190 on the sidewall S1 of the at least one finstructure 130 provides for a channel region interface I with the sourceand drain region structures that is free of defects, such as pointdefects, voids, stacking faults, line defects and dislocation defects.

FIGS. 1A and 1B also depict replacing the sacrificial gate structure 50with a functional gate structure 160. In some embodiments, thesacrificial gate structure 50 may he removed by a selective etchprocess. The sacrificial gate structure 50 may be removed using a wet ordry etch process. In one embodiment, the sacrificial gate structure 50is removed by reactive ion etch (RIE). In one example, the etch processfor removing the sacrificial gate structure 50 can include an etchchemistry for removing the sacrificial gate structure 50 selective to atleast one fin structure 130, the gate sidewall spacer 150, and thesecond epitaxial material 190.

A functional gate structure 160 may then be formed in the opening to thechannel region of the device that is formed by removing the sacrificialgate structure 50. The function gate structure 160 typically includes atleast one gate dielectric 135 and at least one gate conductor 140,wherein the at least one gate dielectric 135 is positioned between theat least one gate conductor 140 and the channel region of the FinFET.The at least one gate dielectric 135 may he formed by a thermal growthprocess such as, e.g., oxidation, nitridation or oxynitridation. The atleast one gate dielectric 135 may also be formed by a depositionprocess, such as, e.g., chemical vapor deposition (CVD), plasma enhancedCVD (PECVD), metal organic CVD (MOCVD), atomic layer deposition (ALD),evaporation, reactive sputtering, chemical solution deposition and otherlike deposition processes. The at least one gate dielectric 135 may alsobe formed utilizing any combination of the above processes.

The at least one gate dielectric 135 may be comprised of a high-k gatedielectric having a dielectric constant that is greater than thedielectric constant of silicon oxide, e.g., about 4.0 or greater. Inanother embodiment, the at least one gate dielectric 135 is comprised ofan insulating material having a dielectric constant greater than 7.0.The dielectric constants mentioned herein are relative to a vacuum. Inone embodiment, the at least one gate dielectric 135 employed in thepresent disclosure includes, but is not limited to, an oxide, nitride,oxynitride and/or silicates including metal silicates, aluminates,titanates and nitrides. In one example, when the at least one gatedielectric 135 is comprised of an oxide, the oxide may be selected fromthe group including, but not limited to, SiO₂, HfO₂, ZrO₂, Al₂O₃, TiO₂,La₂O₃, SrTiO₃, LaAlO₃, Y₂O₃ and mixture thereof. The physical thicknessof the at least one gate dielectric 135 may vary, but typically, the atleast one gate dielectric 135 has a thickness from 1 nm to 10 nm. Inanother embodiment, the at least one gate dielectric 135 has a thicknessfrom 1 nm to 3 nm.

After forming the material layer for the at least one gate dielectric135, a conductive material which forms the at least one gate conductor140 of functional gate structure 160 is formed on the at least one gatedielectric 135 utilizing a deposition process, such as physical vapordeposition (PVD), CVD or evaporation. The conductive material maycomprise polysilicon, SiGe, a silicide, a metal or ametal-silicon-nitride such as Ta—Si—N. Examples of metals that can beused as the conductive material include, but are not limited to, Al, W,Cu, and Ti or other like conductive metals. The conductive material maybe doped or undoped. If doped, an in-situ doping deposition process maybe employed. Alternatively, a doped conductive material can be formed bydeposition, ion implantation and annealing.

It is noted that the above process sequence may include furtherpreliminary, intermediate and finalizing steps that have not beendescribed above.

In another embodiment, the process sequence for forming the finFETstructure depicted in FIGS. 1A and 1B is formed using agate firstprocess sequence, which is not depicted in the supplied figures. Themethod depicted in FIGS. 1A-8B is a gate last process that includesreplacing a sacrificial gate structure with functional gate structure.In another embodiment, a functional gate structure is formed in thebeginning of the process flow instead of a sacrificial gate structure,and the functional gate structure remains throughout the formation ofthe FinFET. This is referred to as a gate first process sequence. Bothgate first and gate last process sequences are applicable to the presentdisclosure.

Methods as described herein may be used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

While the methods and structures of the present disclosure have beenparticularly shown and described with respect to preferred embodimentsthereof, it will be understood by those skilled in the art that theforegoing and other changes in forms and details may be made withoutdeparting from the spirit and scope of the present disclosure. It istherefore intended that the present disclosure not be limited to theexact forms and details described and illustrated, but fall within thescope of the appended claims.

What is claimed is:
 1. A structure comprising: a pedestal of aninsulating material present over at least one layer of a semiconductormaterial; at least one fin structure in contact with the pedestal of theinsulating material; source and drain region structures on opposingsides of the at least one fin structure, at least one of the source anddrain region structures comprising at least two epitaxial materiallayers, wherein a first epitaxial material layer of the at least twoepitaxial layers is in contact with the at least one layer ofsemiconductor material, and a second epitaxial material layer of the atleast two epitaxial layers is in contact with the at least one finstructure, the first epitaxial material layer being separated from theat least one fin structure by the second epitaxial material layer; and agate structure present on the at least one fin structure.
 2. Thestructure according to claim 1, wherein the at least one fin structureis a channel region, and an interface between the second epitaxialmaterial layer of the source and drain region structures and the channelregion is substantially free of defects.
 3. The structure according toclaim 1, wherein the at least one layer of semiconductor materialcomprises a punch-through layer and a semiconductor substrate, whereinthe punch-through layer is present between the pedestal of theinsulating material and the semiconductor substrate.
 4. The structureaccording to claim 3, wherein the punch through layer is a doped portionof the substrate.
 5. The structure according to claim 3, wherein thepunch-through layer is doped to a conductivity type that is opposite aconductivity type of the source and drain region structures.
 6. Thestructure according to claim 3, wherein the second epitaxial layer is incontact with the punch-through layer.
 7. The structure according toclaim 1, wherein a gate sidewall spacer is present on the gatestructure, wherein a sidewall of the fin structure is aligned with anouter sidewall of the gate sidewall spacer, the first epitaxial materiallayer having a vertical portion in contact with the sidewall of the finstructure and a horizontal portion on an upper surface of the secondepitaxial material layer.
 8. The structure according to claim 6, whereinthe first epitaxial material layer has a crystalline structure that isaligned with a crystalline structure of the punch-through layer, and thesecond epitaxial material layer has a crystalline structure that isaligned with a crystal structure of the sidewall of the at least one finstructure.
 9. The structure according to claim 1, wherein the structureis a FinFET semiconductor device.
 10. A method comprising: providing atleast one fin structure over a stacked structure of an insulator layerthat is present over at least one semiconductor layer; providing a gatestructure on a channel region portion of the at least one fin structure;removing exposed portions of the at least one fin structure; forming asacrificial spacer on a sidewall of the gate structure; removing exposedportions of the insulator layer to provide a pedestal of insulatingmaterial exposing a portion of at least one semiconductor layer; forminga first epitaxial material layer on the portion of the at least onesemiconductor layer exposed by removing the exposed portions of theinsulator layer, the first epitaxial material layer contacting thesacrificial spacer; removing the sacrificial spacer; and forming asecond epitaxial material layer in a space provided by said removing ofthe sacrificial spacer, the second epitaxial material layer contacting asidewall of the at least one fin structure, wherein the first and secondepitaxial material layers provide source and drain regions on opposingsides of the channel region portion of the at least one fin structure.11. The method according to claim 10 further comprising forming a gatesidewall spacer directly on the sidewall of the gate structure prior tothe removing of the exposed portions of the insulator layer, herein saidforming the sacrificial spacer over the sidewall of the gate structurecomprises forming the sacrificial spacer directly on the gate sidewallspacer.
 12. The method according to claim 10, wherein the at least onesemiconductor layer comprises a punch-through layer and a semiconductorsubstrate, wherein the punch-through layer is present between theinsulating layer and the semiconductor substrate.
 13. The methodaccording to claim 12, wherein the punch-through layer is a doped layerwith a dopant opposite to a dopant that dictates the conductivity typeof the source and drain regions.
 14. The method according to claim 10,wherein the second epitaxial material layer contacts the pedestal ofinsulating material and does not contact the at least one semiconductorlayer.
 15. The method according to claim 10, wherein the secondepitaxial material layer separates the first epitaxial material layerfrom contacting the at least one fin structure.
 16. The method accordingto claim 10, wherein the sacrificial spacer that is present on thesidewall of the gate structure has a base that is in contact with thepedestal of insulting material.
 17. The method according to claim 10,wherein the first epitaxial material layer is epitaxially grown from asurface of the at least one semiconductor layer exposed by removing theexposed portions of the insulator layer.
 18. The method according toclaim 10, wherein the second epitaxial material layer is epitaxiallygrown from a surface of the sidewall of the at least one fin structureand a surface of the first epitaxial material layer.
 19. The methodaccording to claim 10, wherein an interface between the first epitaxiallayer of the source and drain region structures and the channel regionis substantially free of defects.
 20. The method according o claim 10,wherein providing the gate structure on the channel region portion ofthe at least one fin structure comprises: forming a sacrificial gatestructure on the channel region portion of the at least one finstructure prior to forming the source and drain regions on opposingsides of the channel region portion of the at least one fin structure;and replacing the sacrificial gate structure with a functional gatestructure after forming the source and drain regions on opposing sidesof the channel region portion of the at least one fin structure.